4M Knowledge base - papers

A CAD/CAM Approach for Layer-Based FIB Processing

Georgi Lalev(a), Stefan Dimov(a), Jeff Kettle(a), Falco van Delft(b) and Roussi Minev(a)
a: Manufacturing Engineering Centre, Cardiff University, Queen's Buildings, The Parade, Newport Road, Cardiff, CF24 3AA, UK
b: Philips Research Europe, MiPlaza, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands


The realization of complex three-dimensional structures at micro- and nano-meter scale in various materials is of great importance for a number of micromechanical, microoptical and microelectronic applications. Focused Ion Beam (FIB)patterning is one of the promising technologies for producing such 3D structures utilizing layer-by-layer fabrication methods. A novel and efficient data preparation approach is proposed in this paper for layer-based FIB processing. By applying it, complex surfaces can be designed easily in any 3D CAD package and then converted into GDSII streams for FIB sputtering or deposition. To validate the proposed CAD/CAM approach an experimental study was conducted.

The factors that can affect the accuracy of the structures produced by layer-based FIB processing are also discussed. By assessing all stages of the proposed approach and the results of its experimental validation, conclusions are drawn about its applicability.

Submitted on November 12, 2007 - 16:23.

Large-area metal-coated dielectric nanopillar array for excitation of surface plasmon resonance

X. Chen, K. Jiang
Micro Engineering and Nanotechnology Group, Department of Mechanical Engineering, University of Birmingham, B15 2TT, UK


Many of current techniques are not suitable for the fabrication of metallic nanostructure on the scale of usual optical coatings at reasonable fabrication cost and time. A fabrication process for producing large-area metalcoated periodic nanopillars is presented. A hybrid metallic nanostructure array was obtained by depositing a silver film with a thickness of ~40 nm on the fused silica nanopillars with an in-plane diameter of ~140 nm and out-ofplane height of ~130 nm, which was fabricated by a combination of interference lithography, metal deposition and etching. There are two peaks in the extinction spectrum of the p-polarized incident light, one at 585.3 nm and the other 493.6 nm. The shift of the higher peak is 32.9 nm (a red-shift), while that of the lower peak is 42.3 nm (a blue-shift) with the addition of absolute ethanol on the sample surface. Such structure was used to monitor the evaporation process of the absolute ethanol on the sample surface. It was found that narrowest extinction peak appears at normal incidence, while the polarization of the incident light does not affect the experimental result due to the symmetrical distribution of the nanostructures. The fabrication process and unique optical properties of the structure array are expected to be suitable for the development of high-throughput ultrasensitive chemical sensor arrays.

Submitted on July 29, 2008 - 15:17.

The integration of mono-crystalline silicon micro-mirrors on CMOS for SLM applications

F. Zimmera, M. Friedrichsa, M. Lapisac, F. Niklausc, M. Muellera, T. Bakkeb, H. Schenka, H. Laknera
a Fraunhofer Institute for Photonic Microsystems (IPMS), Maria-Reiche-Str. 2, D-01109 Dresden, Germany
b SINTEF Department of Mikrosystems and Nanotechnology, Gaustadalleen 23C, Oslo, Norway
c KTH, The Royal Institute of Technology, Stockholm, Sweden


Spatial light modulators (SLMs) based on micro-mirrors for use in DUV lithography and adaptive optics need very high mirror planarity as well as mirror stability. We will present results of new micro-mirror arrays, consisting of monocrystalline silicon, which is a material to fulfil these requirements. As all mirrors of the SLM can be separately activated by an underlying CMOS circuit, the integration of CMOS and MEMS must be achieved, which results in certain restrictions on processing temperatures and the compatibility of materials. Therefore a special low temperature bonding technology has been developed, using an adhesive polymer. This technique provides the transfer of a 300nm thin mono-crystalline silicon layer to the CMOS wafer using only 250°C. First silicon micro-mirrors have been made and characterized using pure adhesive polymer (PMGI), improvements using a mix of an inorganic material with a thin bond-polymer benzocyclobutene BCB) on top are in development. Both approaches and their results will be discussed and presented in detail.

Submitted on July 29, 2008 - 11:33.

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